Youngki Yoon

National Institute for Nanotechnology

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Xiaolin Li

Sichuan Agricultural University

Li Zhang

Xiamen University

I. Omkaram

Kyung Hee University

Xinran Wang

Collaborative Innovation Center of Advanced Microstructures

Hongjie Dai

Southwest University

Junyeon Kwon

Sungkyunkwan University

Sunkook Kim

Sungkyunkwan University

Peter Weber

Lawrence Livermore National Laboratory

Hailiang Wang

Yale University

Young Ki Hong

Gyeongsang National University

Cooperative Institutions

Kyung Hee University

Sungkyunkwan University

Government of the Republic of Korea

Korea Institute of Science and Technology

Kyonggi University

Korea Electronics Technology Institute

Zhejiang University

Beijing University of Chemical Technology

Xiamen University

North China University of Water Resources and Electric Power

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N-Doping of Graphene Through Electrothermal Reactions with Ammonia

Science (2009)

Xinran Wang Xiaolin Li Li Zhang Youngki Yoon Peter Weber

Graphene is readily p-doped by adsorbates, but for device applications, it would be useful to access the n-doped material. Individual graphene nanoribbons were covalently functionalized by nitrogen species through high-power electrical joule heating in ammonia gas, leading to n-type electronic doping consistent with theory. The formation of the carbon-nitrogen bond should occur mostly at the edges of graphene where chemical reactivity is high. X-ray photoelectron spectroscopy and nanometer-scale secondary ion mass spectroscopy confirm the carbon-nitrogen species in graphene thermally annealed in ammonia. We fabricated an n-type graphene field-effect transistor that operates at room temperature.

Ribbon

Nanometre

STRIPS

10.1126/science.1170335

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Citations (2,107)

Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast Photodetector

Scientific Reports (2015)

Chulseung Jung Seung Min Kim Hyunseong Moon Gyuchull Han Junyeon Kwon

Abstract Hexagonal molybdenum diselenide (MoSe 2 ) multilayers were grown by chemical vapor deposition (CVD). A relatively high pressure (>760 Torr) was used during the CVD growth to achieve multilayers by creating multiple nuclei based on the two-dimensional crystal growth model. Our CVD-grown multilayer MoSe 2 thin-film transistors (TFTs) show p-type-dominant ambipolar behaviors, which are attributed to the formation of Se vacancies generated at the decomposition temperature (650 °C) after the CVD growth for 10 min. Our MoSe 2 TFT with a reasonably high field-effect mobility (10 cm 2 /V · s) exhibits a high photoresponsivity (93.7 A/W) and a fast photoresponse time (τ rise ~ 0.4 s) under the illumination of light, which demonstrates the practical feasibility of multilayer MoSe 2 TFTs for photodetector applications.

Ambipolar diffusion

Tungsten diselenide

Torr

10.1038/srep15313

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Citations (146)